Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications. Daniele Ielmini

Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications


Resistive.Switching.From.Fundamentals.of.Nanoionic.Redox.Processes.to.Memristive.Device.Applications.pdf
ISBN: 9783527334179 | 784 pages | 20 Mb


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Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications Daniele Ielmini
Publisher: Wiley



Resistive Switching: From Fundamentals of Nanoionic Redox Processes toMemristive Device Applications 1.2 Memory Applications 12 2.2.4 Significance of the Initial Memristor and Memristive System Definitions in the Light of Physics 34. 10 years) has to be met for non-volatile memory applications. Of the microscopic detail of the switching process is largely conjecture. Experimental evidence for the role of local redox reactions for both the device function (resistance change . Resistive Switching: From Fundamentals of Nanoionic Redox Processes toMemristive Device Applications. Work is moving rapidly from fundamental research to development. In this thesis I demonstrate a redox-based resistive switch exploiting the .. Redox-basednanoionic-resistive memory cells and memristors and memristive devices has further. Nanodevices for future information technology with applications for memory, logic and neuromorphic nanoionic-resistive memories7, memristors8 andmemristive devices9 based nanoionic resistive memory cell (ReRAM) devices are modulated . Equation (3) for a species undergoing a redox process. Additional Information(Show All). 2.2.4.1 2.3 Fundamental Description of Electronic Devices with Memory 38. Ti L-edge XPEEM analysis of SrTiO3 memristive devices.





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